Electronic properties of vertically stacked MoS2/WS2 heterostructure
https://doi.org/10.31242/2618-9712-2022-27-3-459-465
Abstract
Monolayer transition metal dichalcogenides (TMD) as new two-dimensional semiconductor materials open new possibilities for optoelectronics due to their excellent light capture and photodetection capabilities. TDM-based photodetectors have become important components of sensing, visualization and communication systems, capable of receiving and converting optical signals into electrical ones. An urgent and unsolved task is the development of high-quality single-layer and heterolayer electronic devices based on transition metal dichalcogenides with a long service life, such as optoelectronic devices and field-effect transistors. The control of the band gap in heterostructures is one of the necessary steps in this development. We studied the band gap in the MoS2/WS2 heterostructure depending on the distance between the MoS2 and WS2 layers. Ab initio calculations showed that, in contrast to homogeneous bilayers, the MoS2/ WS2 heterojunction has an optically active band gap smaller than that of single-layer MoS2 and WS2. With an increase in the interlayer distance in the MoS2/WS2 heterostructures, the interaction between the layers weakens. Thus, it results in a shift of the Fermi level to a state of higher energy.
About the Authors
Yu. M. Grigor’ev
M.K. Ammosov North-Eastern Federal University;
Academy of Sciences of the Republic of Sakha (Yakutia)
Russian Federation
Russian Federation
GRIGOR’EV, Yuri Mikhailovich, Dr. Sci. (Physics and Mathematics), Deputy Rector, Head of the Theoretical Physics Department, Leading Researcher, Author ID: 14623701400, Researcher ID: K-8270-2016
58 Belinskogo st., Yakutsk 677891;
41 Lenina pr., Yakutsk 677007
E. P. Sharin
M.K. Ammosov North-Eastern Federal University
Russian Federation
Russian Federation
SHARIN, Egor Petrovich, Cand. Sci. (Physics and Mathematics), Associate Professor, Author ID: 56291744200, Researcher ID: H-1093-2013
58 Belinskogo st., Yakutsk 677891
N. Ya. Muksunov
M.K. Ammosov North-Eastern Federal University
Russian Federation
Russian Federation
MUKSUNOV, Nikita Yanovich, student, Institute of Physics and Technology
58 Belinskogo st., Yakutsk 677891
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Review
For citations:
Grigor’ev Yu.M., Sharin E.P., Muksunov N.Ya. Electronic properties of vertically stacked MoS2/WS2 heterostructure. Arctic and Subarctic Natural Resources. 2022;27(3):459-465. (In Russ.) https://doi.org/10.31242/2618-9712-2022-27-3-459-465
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