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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">resar</journal-id><journal-title-group><journal-title xml:lang="ru">Природные ресурсы Арктики и Субарктики</journal-title><trans-title-group xml:lang="en"><trans-title>Arctic and Subarctic Natural Resources</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">2618-9712</issn><issn pub-type="epub">2686-9683</issn><publisher><publisher-name>Академия наук Республики Саха (Якутия)</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.31242/2618-9712-2023-28-3-487-494</article-id><article-id custom-type="elpub" pub-id-type="custom">resar-243</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>Материаловедение и химические технологии</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>Materials science and chemical technologies</subject></subj-group></article-categories><title-group><article-title>Наноструктурированные углеродные пленки, полученные методом осаждения в плазме СН4 с последующей термообработкой: структурные особенности, их влияние на электрические и оптоэлектронные свойства</article-title><trans-title-group xml:lang="en"><trans-title>Nanostructured carbon films obtained by CH4 plasma deposition and annealing at high temperature: structural features and their effects on electrical and optoelectronic properties</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0002-2212-2485</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Прокопьев</surname><given-names>А. Р.</given-names></name><name name-style="western" xml:lang="en"><surname>Prokopev</surname><given-names>A. R.</given-names></name></name-alternatives><bio xml:lang="ru"><p>ПрокопьеВ Айсен Русланович, научный сотрудник</p><p>Якутск</p><p>Scopus AuthorID: 1127739,</p><p>ResearcherID: GPP-2928-2022</p></bio><bio xml:lang="en"><p>Prokopev, Aisen R., Researcher</p><p>Yakutsk</p><p>Scopus AuthorID: 1127739,</p><p>ResearcherID: GPP-2928-2022</p></bio><email xlink:type="simple">aisenprokopiev@mail.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0002-8163-2012</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Неустроев</surname><given-names>Е. П.</given-names></name><name name-style="western" xml:lang="en"><surname>Neustroev</surname><given-names>E. P.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Неустроев Ефим Петрович, кандидат физико-математических наук, доцент</p><p>Якутск</p><p>Scopus AuthorID: 32482,</p><p>ResearcherID: A-3860-2014</p></bio><bio xml:lang="en"><p>Neustroev, Efim P., Cand. Sci. (Phys. and Math.), Associate Professor</p><p>Yakutsk</p><p>Scopus AuthorID: 32482,</p><p>ResearcherID: A-3860-2014</p></bio><email xlink:type="simple">neustr@mail.ru</email><xref ref-type="aff" rid="aff-1"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>Северо-Восточный федеральный университет им. М.К. Аммосова</institution><country>Россия</country></aff><aff xml:lang="en"><institution>Ammosov North-Eastern Federal University</institution><country>Russian Federation</country></aff></aff-alternatives><pub-date pub-type="collection"><year>2023</year></pub-date><pub-date pub-type="epub"><day>26</day><month>09</month><year>2023</year></pub-date><volume>28</volume><issue>3</issue><fpage>487</fpage><lpage>494</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Прокопьев А.Р., Неустроев Е.П., 2023</copyright-statement><copyright-year>2023</copyright-year><copyright-holder xml:lang="ru">Прокопьев А.Р., Неустроев Е.П.</copyright-holder><copyright-holder xml:lang="en">Prokopev A.R., Neustroev E.P.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://resar.elpub.ru/jour/article/view/243">https://resar.elpub.ru/jour/article/view/243</self-uri><abstract><p>В работе представлены результаты исследования структуры, электрических и оптоэлектронных свойств наноструктурированных углеродных пленок, полученных методом осаждения в плазме метана с последующей термообработкой. Показано, что условия получения пленок влияют на конечные физико-химические параметры. Изучение морфологии пленок проведено методами атомно-силовой микроскопии, сканирующей электронной микроскопии, рамановской и рентгеновской энергодисперсионной спектроскопии, анализа вольтамперных характеристик (ВАХ). Толщины пленок составляют от 20 до 150 нм с отношением содержания атомов углерода к атомам кислорода (C/O) 4:1. Исследования структуры показали, что полученные пленки состоят из нанографитовых чешуек, латеральные размеры которых лежат в диапазоне от 5 до 12 нм с различным соотношением sp3/sp2 кристаллических фаз углерода. Установлено, что с увеличением температуры постплазменной термообработки от 650 до 800 °С повышается дефектность структуры углеродных пленок. В то же время растет степень графитизации, на что указывают данные рамановской спектроскопии и значения слоевых сопротивлений, определенные из ВАХ. Из температурных зависимостей ВАХ были вычислены значения фототоков, показавшие, что образцы проявляют фоточувствительность в диапазоне температур от комнатной температуры до –173 °С. Данные результаты могут быть полезны при создании сенсоров дневного и ночного освещения, а также датчиков температуры, пригодных для использования в широком интервале температур.</p></abstract><trans-abstract xml:lang="en"><p>This article is dedicated to the study of the structural, electrical, and optoelectronic properties of nanostructured carbon films obtained by methane plasma deposition, followed by annealing at high temperatures (650–800 °C). The conditions for obtaining the films affected the final physicochemical parameters. We studied the film morphology using atomic force microscopy, scanning electron microscopy, Raman spectroscopy, X-ray energy-dispersive analysis, and analysis of the current voltage (C-V) characteristics. The film thickness ranged from 20 to 150 nm, with a C/O ratio of 4:1. Structural studies have shown that the resulting nanostructured carbon films consist mainly of nanographite flakes, the lateral dimensions of which lie in the lateral size (La) range of 5 to 12 nm, and contain different fractional concentrations of sp3/sp2 crystalline phases of carbon. We have established that with an increase in the annealing temperature, the defectiveness of the carbon film structure increases; however, at the same time, the degree of graphitization increases, as indicated by the Raman spectroscopy data and the calculated values of layer resistances from the C-V characteristics. The values of photocurrents were calculated, from which it was found that the samples exhibited photosensitivity in the temperature range of room temperature to –173 °C, based on the temperature dependences of the C-V. The obtained results can be useful in creating day and night light sensors as well as temperature sensors suitable for use at low temperatures.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>наноструктурированная углеродная пленка</kwd><kwd>осаждение углерода в плазме</kwd><kwd>термообработка</kwd><kwd>sp2-нанокристаллиты графита</kwd><kwd>температурная зависимость ВАХ</kwd><kwd>фототок</kwd><kwd>низкие температуры</kwd></kwd-group><kwd-group xml:lang="en"><kwd>nanostructured carbon films</kwd><kwd>carbon deposition in plasma</kwd><kwd>annealing</kwd><kwd>sp2-nanocrystalline graphite</kwd><kwd>temperature dependencies of C-V</kwd><kwd>photocurrent</kwd><kwd>low temperatures</kwd></kwd-group><funding-group><funding-statement xml:lang="ru">Работа выполнена в рамках проекта Министерства науки и высшего образования Российской Федерации (№ FSRG-2022-0011) и гранта Главы РС(Я) для молодых ученых, специалистов и студентов «Получение углеродсодержащих пленочных покрытий, осажденных на различные поверхности в плазме метана»</funding-statement><funding-statement xml:lang="en">This study was funded by the Ministry of Science and Higher Education (number FSRG-2022-001) and a grant from the Head of the Republic of Sakha (Yakutia) for young scientists, specialists and students “Production of carbon-containing film coatings deposited on various surfaces in methane plasma”</funding-statement></funding-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Zeng Y. et al. 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